| PART |
Description |
Maker |
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SFF116N10M SFF116N10Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| FT0054A FT0054A-15 |
Avalanche Rated N-channel HiPower MOSFET
|
Solid States Devices, I...
|
| IXFR34N80 |
Single MOSFET Die Avalanche Rated
|
IXYS Corporation
|
| IXTT30N50P IXTV30N50PS IXTH30N50P IXTQ30N50P |
N-Channel Enhancement Mode Avalanche Rated
MOSFET N-CH 500V 30A TO-3P
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IRF540 IRF540PBF |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
|
| IRFAC40 IRFAC40-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
International Rectifier
|
| IXTA32N20T IXTP32N20T |
TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTP130N10T IXTA130N10T |
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
